Processing and characterisation of an etched groove Permeable

• The Permeable Base Transistor (PBT) is generally considered as an interesting device for high speed applications. PBTs have been fabricated on Silicon and Gallium Arsenide by a number of groups. In this paper we reported on the fabrication of an etched groove PBT structure on 6H-SiC using Ti as contact metal for all electrodes. The devices have been characterised by DC-measurements. The transistors show the normal IV-characteristics for a such a device except for a parasitic series diode at the drain electrode. The breakdown voltage of the gate-drain diode is generally as high as around 60 V even without passivation of the sidewalls of the grooves.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

Permeable base transistor Silicon carbide

Electrical engineering, electronics and photonics

Elektroteknik, elektronik och fotonik

Publikations- och innehållstyp

ref (ämneskategori)

art (ämneskategori)