A Monte Carlo Study of low field transport in Al doped 4H-SiC

• The ohmic transport of holes in p-type aluminum-doped 4H-SiC samples is investigated using a Monte Carlo (MC) tool based on a full-potential band structure. The temperature and doping dependence of the hole mobility and its anisotropy are calculated and discussed from a physical point of view, where we stress the importance of considering two-band conduction. Acoustic and optical phonon scattering, as well as ionized and neutral impurity scattering, have been considered. The MC program considers incomplete ionization of impurity atoms, and we assume an impurity level with the ionization energy 0.2 eV, corresponding to Al-doped samples. © 2001 Published by Elsevier Science B.V

Nyckelord

4H-SiC

Anisotropy

Mobility

Monte Carlo simulation

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