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Growth of SiGe laye...
Growth of SiGe layers in source and drain regions for 10 nm node complementary metal-oxide semiconductor (CMOS)
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- Wang, Guilei (författare)
- Chinese Academy of Sciences, Beijing, China
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- Kolahdouz, M. (författare)
- University of Tehran, Tehran, Iran
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- Luo, Jun (författare)
- Chinese Academy of Sciences, Beijing, China
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- Qin, Changliang (författare)
- Chinese Academy of Sciences, Beijing, China
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- Gu, Shihai (författare)
- Chinese Academy of Sciences, Beijing, China
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- Kong, Zhenzhen (författare)
- Chinese Academy of Sciences, Beijing, China
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- Yin, Xiaogen (författare)
- Chinese Academy of Sciences, Beijing, China
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- Xiong, Wenjuan (författare)
- Chinese Academy of Sciences, Beijing, China
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- Zhao, Xuewei (författare)
- Chinese Academy of Sciences, Beijing, China
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- Liu, Jinbiao (författare)
- Chinese Academy of Sciences, Beijing, China
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- Yang, Tao (författare)
- Chinese Academy of Sciences, Beijing, China
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- Li, Junfeng (författare)
- Chinese Academy of Sciences, Beijing, China
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- Yin, Huaxiang (författare)
- Chinese Academy of Sciences, Beijing, China
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- Zhu, Huilong (författare)
- Chinese Academy of Sciences, Beijing, China
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- Wang, Wenwu (författare)
- Chinese Academy of Sciences, Beijing, China
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- Zhao, Chao (författare)
- Chinese Academy of Sciences, Beijing, China
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- Ye, Tianchun (författare)
- Chinese Academy of Sciences, Beijing, China
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- Radamson, Henry H. (författare)
- Mittuniversitetet,Institutionen för elektronikkonstruktion,Chinese Academy of Sciences, Beijing, China
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(creator_code:org_t)
- 2019-01-17
- 2020
- Engelska.
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Ingår i: Journal of materials science. Materials in electronics. - : Springer Science and Business Media LLC. - 0957-4522 .- 1573-482X. ; 31, s. 26-33
- Relaterad länk:
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https://doi.org/10.1...
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- In this study, the integration of Si 1−x Ge x (50% ≤ x ≤ 60%) selective epitaxy on source/drain regions in 10 nm node FinFET has been presented. One of the major process issues was the sensitivity of Si-fins’ shape to ex- and in-situ cleaning prior to epitaxy. For example, the sharpness of Si-fins could easily be damaged during the wafer washing. The results showed that a DHF dip before the normal cleaning, was essential to clean the Si-fins while in-situ annealing in range of 780–800 °C was needed to remove the native oxide for high epitaxial quality. Because of smallness of fins, the induced strain by SiGe could not be directly measured by X-ray beam in a typical XRD tool in the lab or even in a Synchrotron facility. Further analysis using nano-beam diffraction technique in high-resolution transmission electron microscope also failed to provide information about strain in the FinFET structure. Therefore, the induced strain by SiGe was simulated by technology computer-aided design program and the Ge content was measured by using energy dispersive spectroscopy. Simulation results showed 0.8, 1 and 1.3 GPa for Ge content of 40%, 50% and 60%, respectively. A kinetic gas model was also introduced to predict the SiGe profile on Si-fins with sharp triangular shape. The input parameters in the model includes growth temperature, partial pressure of the reactant gases and the exposed Si coverage in the chip area.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
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Till lärosätets databas
- Av författaren/redakt...
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Wang, Guilei
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Kolahdouz, M.
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Luo, Jun
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Qin, Changliang
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Gu, Shihai
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Kong, Zhenzhen
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visa fler...
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Yin, Xiaogen
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Xiong, Wenjuan
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Zhao, Xuewei
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Liu, Jinbiao
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Yang, Tao
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Li, Junfeng
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Yin, Huaxiang
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Zhu, Huilong
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Wang, Wenwu
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Zhao, Chao
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Ye, Tianchun
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Radamson, Henry ...
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visa färre...
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