Growth Optimization, Strain Compensation Structure Design of InAs/GaSb Type-II Superlattices for Mid-Infrared Imaging

• InAs/GaSb type-II superlattice (T2SL) photodetector structures at the MWIR regime were grown by molecular beam epitaxy. The growth temperature group-V soaking times were optimized with respect to interface transport quality. Novel strain compensation schemes with insertion of InSb layers were proposed tested to be efficient to tune the overall strain between tensile compressive without degradation of interface optical quality. The effect of the proposed methods is modeled by analytic functions. Bstructure calculations were also carried out for the proposed T2SL structures to assist optimizing sample designs. Single pixel photodiodes with a low dark current were demonstrated._x000D_

Ämnesord

NATURVETENSKAP  -- Data- och informationsvetenskap (hsv//swe)

NATURAL SCIENCES  -- Computer and Information Sciences (hsv//eng)

Nyckelord

InAs/GaSb

Type-II Superlattce

Molecular Beam Epitaxy

Strain Compensation

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