Sökning: id:"swepub:oai:DiVA.org:ri-33721" >
Improving the morph...
Improving the morphological stability of nickel germanide by tantalum and tungsten additions
-
- Jablonka, Lukas (författare)
- Uppsala universitet,Fasta tillståndets elektronik
-
- Kubart, Tomas, 1977- (författare)
- Uppsala universitet,Fasta tillståndets elektronik
-
- Gustavsson, Fredrik, 1977- (författare)
- Uppsala universitet,RISE,KIMAB,Uppsala University, Sweden,Fasta tillståndets elektronik,Swerea KIMAB AB, Box 7047, SE-16407 Kista, Sweden
-
visa fler...
-
- Descoins, M. (författare)
- CNRS-Université d'Aix-Marseille, France,Univ Aix Marseille, CNRS, IM2NP, Case 142, F-13397 Marseille 20, France
-
- Mangelinck, D. (författare)
- CNRS-Université d'Aix-Marseille, France,Univ Aix Marseille, CNRS, IM2NP, Case 142, F-13397 Marseille 20, France
-
- Zhang, Shi-Li (författare)
- Uppsala universitet,Fasta tillståndets elektronik
-
- Zhang, Zhen, 1979- (författare)
- Uppsala universitet,Fasta tillståndets elektronik
-
visa färre...
-
(creator_code:org_t)
- AIP Publishing, 2018
- 2018
- Engelska.
-
Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 112:10
- Relaterad länk:
-
http://uu.diva-porta...
-
visa fler...
-
https://uu.diva-port... (primary) (Raw object)
-
https://urn.kb.se/re...
-
https://doi.org/10.1...
-
https://urn.kb.se/re...
-
visa färre...
Abstract
Ämnesord
Stäng
- To enhance the morphological stability of NiGe, a material of interest as a source drain-contact in Ge-based field effect transistors, Ta or W, is added as either an interlayer or a capping layer. The efficacy of this Ta or W addition is evaluated with pure NiGe as a reference. While interlayers increase the NiGe formation temperature, capping layers do not retard the NiGe formation. Regardless of the initial position of Ta or W, the morphological stability of NiGe against agglomeration can be improved by up to 100 degrees C. The improved thermal stability can be ascribed to an inhibited surface diffusion, owing to Ta or W being located on top of NiGe after annealing, as confirmed by means of transmission electron microscopy, Rutherford backscattering spectrometry, and atom probe tomography. The latter also shows a 0.3 at. % solubility of Ta in NiGe at 450 degrees C, while no such incorporation of W is detectable.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Publikations- och innehållstyp
- ref (ämneskategori)
- art (ämneskategori)
Hitta via bibliotek
Till lärosätets databas