Design and characterization of newly developed 10 kV 2 A SiC p-i-n diode for soft-switching industrial power supply

• 10 kV, 2 A SiC p-i-n diodes have been designed and fabricated. The devices feature excellent stability of forward characteristics and robust junction termination with avalanche capability of 1 J. The fabricated diodes have been electrically evaluated with respect to dynamic ON-state voltage, reverse recovery behavior, bipolar stability, and avalanche capability. More than 60% reduction of losses has been demonstrated using newly developed 10-kV p-i-n diodes in a multikilowatt high voltage, high-frequency dc/dc soft-switching converter

Nyckelord

4H-SiC

avalanche energy

bipolar degradation

carrier lifetime

dynamic on-resistance

Junction Termination Extension (JTE)

p-i-n diode

soft switching

DC-DC converters

Diodes

Semiconductor junctions

Silicon carbide

Switching circuits

Avalanche energies

Bipolar degradations

Junction termination extensions

On-resistance

PiN diode

Avalanche diodes

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