Calculations of electron-impact excitation and dielectronic recombination rate coefficients of highly charged silicon ions

• The rate coefficients for dielectronic recombination and electron-impact excitation processes with H-like to Be-like silicon ions (Si13+−Si10+) are calculated using relativistic distorted-wave approach. The prominent △n=1 and the weaker △n=2 and 3 dielectronic recombination (DR) resonances with K-shell excitations are presented, and compared with the existing DR experimental rate coefficients of Si13+, Si12+, and Si11+ ions, it is found that the theoretical DR rate coefficients are in very good agreement with the experimental results. With the same approach, the direct and resonant electron-impact excitation (EIE) cross sections associated with 1s−n′l′ core excitations are calculated for the ground states of Si13+−Si10+ ions and found in excellent agreement with the available experiment. Finally, we present the synthesized DR and EIE rate coefficients for the sum of all detected (13+∼10+) charge states of Si and these agree well with the experimental results.

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NATURVETENSKAP  -- Fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences (hsv//eng)

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