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Highly stable CsPbI...
Highly stable CsPbI3 perovskite quantum dots enabled by single SiO2 coating toward down-conversion light-emitting diodes
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- Pan, Zhangcheng (author)
- Microelectronics Industry Research Institute, College of Physical Science and Technology, Yangzhou University, Yangzhou, China
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- Zhu, Xiaolin (author)
- Microelectronics Industry Research Institute, College of Physical Science and Technology, Yangzhou University, Yangzhou, China
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- Xu, Tianyue (author)
- Microelectronics Industry Research Institute, College of Physical Science and Technology, Yangzhou University, Yangzhou, China
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- Xie, Qingyu (author)
- Microelectronics Industry Research Institute, College of Physical Science and Technology, Yangzhou University, Yangzhou, China
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- Chen, Haitao (author)
- Microelectronics Industry Research Institute, College of Physical Science and Technology, Yangzhou University, Yangzhou, China
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- Xu, Feng (author)
- Microelectronics Industry Research Institute, College of Physical Science and Technology, Yangzhou University, Yangzhou, China
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- Lin, Hao (author)
- Institute of Applied Physics and Materials Engineering, University of Macau, Taipa, Macao
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- Wang, Jia (author)
- Umeå universitet,Institutionen för fysik
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- Liu, Yongfeng (author)
- Microelectronics Industry Research Institute, College of Physical Science and Technology, Yangzhou University, Yangzhou, China
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(creator_code:org_t)
- MDPI, 2023
- 2023
- English.
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In: Applied Sciences. - : MDPI. - 2076-3417. ; 13:13
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Abstract
Subject headings
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- All-inorganic CsPbI3 perovskite quantum dots (PeQDs) have sparked widespread research due to their excellent optoelectronic properties and facile synthesis. However, attaining highly stable CsPbI3 perovskite quantum dots (PeQDs) against heat and polar solvents still remains a challenge and hinders any further practical application. Here, by exploiting (3-aminopropyl) triethoxysilane (APTES) as the sole silica (SiO2) precursor, we report a one-step in situ synthesis of single SiO2-coated CsPbI3 (SiO2-CsPbI3) PeQDs, namely that one SiO2 particle only contains one CsPbI3 PeQD particle. The obtained SiO2-CsPbI3 PeQDs are cubic in shape, have a more uniform size distribution, and possess narrow emission, with near unit photoluminescence quantum yields of up to 97.5%. Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy confirm the formation of SiO2 through the hydrolysis of APTES on the CsPbI3 PeQDs surface. Furthermore, they have a significantly improved stability against storage, heat, and ethanol. By combining purple-emission GaN light-emitting diodes, the SiO2-CsPbI3 PeQDs were successfully employed as down-conversion emitters and exhibited considerable enhanced luminous performance and excellent stability, demonstrating their promising future in the practical application of solid-state lighting fields.
Subject headings
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Keyword
- CsPbI3
- heat and polar stability
- instability
- perovskite quantum dots
- photoluminescence
- silica coating
Publication and Content Type
- ref (subject category)
- art (subject category)
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