Correlation between interfacial electronic structure and mechanical properties of ZrN/SiNx films

• The ZrN/SiNx double-layers with different density of SiNx layers, which was controlled by applying different substrate bias for depositing SiNx layers, were synthesized for investigating the interfacial electronic structure. Results indicated that the interfacial electrostatic polarization existed as the ZrN and SiNx bond with each other to form a heterojunction, since the electrons donated from ZrN layer to SiNx layer. Moreover, the degree of polarization was affected by the density of SiNx layer. The corresponding ZrN/SiNx multi-layers were deposited for studying the correlation between interfacial electronic structure and mechanical properties. The results of hardness test implied that the interfacial electrostatic polarization would enhance the hardness to a certain extent.

Nyckelord

Electrostatic polarization

Indentation and hardness

Interface

Thin films

Degree of polarization

Different substrates

Hardness test

Interfacial electronic structure

Deposits

Electrostatics

Hardness

Heterojunctions

Interfaces (materials)

Polarization

Electronic structure

Publikations- och innehållstyp

ref (ämneskategori)

art (ämneskategori)