Ultra-shallow junctions formed using microwave annealing

• Microwave annealing is shown to be viable for achieving low thermal budget formation of ultra-shallow junctions. Regrowth of a 10 nm thick amorphous Si layer that is generated during a Ge amorphization process prior to BF2 or As dopant implantation proceeds at rates up to 0.53 nm/min for BF2 and up to 0.33 nm/min for As at 370 degrees C. The fraction of electrical activation for implanted dopants is as high as 13% for BF2 and 32% for As with negligible diffusion at 540 degrees C.

Keyword

Engineering Science with specialization in Electronics

Teknisk fysik med inriktning mot elektronik

Publication and Content Type

ref (subject category)

art (subject category)