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Processing and evaluation of metal gate/high-k/Si capacitors incorporating Al, Ni, TiN, and Mo as metal gate, and ZrO2 and HfO2 as high-k dielectric
- Abermann, S. (author)
- Efavi, J. (author)
-
- Sjöblom, Gustaf (author)
- Uppsala universitet,Fasta tillståndets elektronik
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- Lemme, Max (author)
- Bertagnolli, E. (author)
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- (creator_code:org_t)
- 2006
- 2006
- English.
- In: Presented at Int. Conf. on Micro- and Nano-Engineering.
- Conference paper (other academic/artistic)
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Subject headings
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
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- Abermann, S.
- Efavi, J.
- Sjöblom, Gustaf
- Lemme, Max
- Olsson, Jörgen, ...
- Bertagnolli, E.
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- ENGINEERING AND TECHNOLOGY
- ENGINEERING AND ...
- and Electrical Engin ...
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- Presented at Int ...
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- Uppsala University
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