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Cd and Cu Interdiff...
Cd and Cu Interdiffusion in Cu(In, Ga) Se-2/CdS Hetero-Interfaces
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- Salome, Pedro M. P. (författare)
- Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal.
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- Ribeiro-Andrade, Rodrigo (författare)
- Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal.;Univ Fed Minas Gerais, Dept Fis, BR-30123970 Belo Horizonte, MG, Brazil.
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- Teixeira, Jennifer P. (författare)
- Univ Aveiro, Dept Fis, P-3810193 Aveiro, Portugal.;Univ Aveiro, I3N, P-3810193 Aveiro, Portugal.
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- Keller, Jan (författare)
- Uppsala universitet,Fasta tillståndets elektronik
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- Törndahl, Tobias, 1974- (författare)
- Uppsala universitet,Fasta tillståndets elektronik
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- Nicoara, Nicoleta (författare)
- Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal.
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- Edoff, Marika, 1965- (författare)
- Uppsala universitet,Fasta tillståndets elektronik
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- Gonzalez, Juan Carlos (författare)
- Univ Fed Minas Gerais, Dept Fis, BR-30123970 Belo Horizonte, MG, Brazil.
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- Leitao, Joaquim Pratas (författare)
- Univ Aveiro, Dept Fis, P-3810193 Aveiro, Portugal.;Univ Aveiro, I3N, P-3810193 Aveiro, Portugal.
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- Sadewasser, Sascha (författare)
- Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal.
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Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal Int Iberian Nanotechnol Lab, P-4715330 Braga, Portugal.;Univ Fed Minas Gerais, Dept Fis, BR-30123970 Belo Horizonte, MG, Brazil. (creator_code:org_t)
- Institute of Electrical and Electronics Engineers (IEEE), 2017
- 2017
- Engelska.
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Ingår i: IEEE Journal of Photovoltaics. - : Institute of Electrical and Electronics Engineers (IEEE). - 2156-3381 .- 2156-3403. ; 7:3, s. 858-863
- Relaterad länk:
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https://urn.kb.se/re...
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https://doi.org/10.1...
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Abstract
Ämnesord
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- We report a detailed characterization of an industrylike prepared Cu(In, Ga) Se-2 (CIGS)/CdS heterojunction by scanning transmission electron microscopy and photoluminescence (PL). Energy dispersive X-ray spectroscopy shows the presence of several regions in the CIGS layer that are Cu deprived and Cd enriched, suggesting the segregation of Cd-Se. Concurrently, the CdS layer shows Cd-deprived regions with the presence of Cu, suggesting a segregation of Cu-S. The two types of segregations are always found together, which, to the best of our knowledge, is observed for the first time. The results indicate that there is a diffusion process that replaces Cu with Cd in the CIGS layer and Cd with Cu in the CdS layer. Using a combinatorial approach, we identified that this effect is independent of focused-ion beam sample preparation and of the transmission electron microscopy grid. Furthermore, PL measurements before and after an HCl etch indicate a lower degree of defects in the postetch sample, compatible with the segregates removal. We hypothesize that Cu2-x Se nanodomains react during the chemical bath process to form these segregates since the chemical reaction that dominates this process is thermodynamically favorable. These results provide important additional information about the formation of the CIGS/CdS interface.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- CdS
- Cu(In
- Ga) Se-2 (CIGS)
- diffusion
- solar cells
- thin films
- transmission electron microscopy (TEM)
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- art (ämneskategori)
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Salome, Pedro M. ...
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Ribeiro-Andrade, ...
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Teixeira, Jennif ...
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Keller, Jan
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Törndahl, Tobias ...
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Nicoara, Nicolet ...
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visa fler...
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Edoff, Marika, 1 ...
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Gonzalez, Juan C ...
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Leitao, Joaquim ...
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Sadewasser, Sasc ...
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visa färre...
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- TEKNIK OCH TEKNOLOGIER
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TEKNIK OCH TEKNO ...
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och Elektroteknik oc ...
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Uppsala universitet