Microwave annealing as a low thermal budget technique for ZnO thin-film transistors fabricated using atomic layer deposition

• Microwave annealing (MWA) and furnace annealing are compared for their low thermal budget capability to improve the characteristics of ZnO-based thin-film transistors (TFTs). Both the ZnO channel and the Al2O3 gate dielectric are fabricated using atomic layer deposition. Using Si-wafer-susceptor assisted MWA with a substantial reduction of both annealing temperature and duration, significant improvements of the characteristics of the ZnO TFTs can be attained. A multi-step MWA process is found to further improve the characteristics of the TFTs. For the same microwave power and total duration, the field-effect mobility of the multi-step MWA TFT is 42% greater than that of the one-step MWA TFT with a similar sub-threshold swing. The multi-step MWA process can serve the purpose at temperatures as low as 220 degrees C.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

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