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Direct observation of interface effects of thin AlAs(100) layers buried in GaAs
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- Agui, A (author)
- Uppsala universitet,Fysiska institutionen
- Sathe, C (author)
- Guo, JH (author)
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- Nordgren, J (author)
- Mankefors, S (author)
- Nilsson, PO (author)
- Kanski, J (author)
- Andersson, TG (author)
- Karlsson, K (author)
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- (creator_code:org_t)
- ELSEVIER SCIENCE BV, 2000
- 2000
- English.
- In: APPLIED SURFACE SCIENCE. - : ELSEVIER SCIENCE BV. - 0169-4332. ; 166:1-4, s. 309-312
- Journal article (peer-reviewed)
Abstract
Subject headings
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- A study of the electronic structure of ultrathin AlAs layers buried in GaAs(100) and their interfaces is presented. Al L-2,L-3 soft-X-ray-emission (SXE) spectra from the AlAs layers were measured. The spectra show distinct thickness-dependent features, wh
Keyword
- interface; AlAs; soft X-ray emission; synchrotron radiation; X-RAY EMISSION
Publication and Content Type
- ref (subject category)
- art (subject category)
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- Agui, A
- Sathe, C
- Guo, JH
- Nordgren, J
- Mankefors, S
- Nilsson, PO
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- Kanski, J
- Andersson, TG
- Karlsson, K
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- Uppsala University
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