Chemical vapor deposition of tungsten schottky diodes to 6H-SiC

• Thermally stable tungsten Schottky contacts to low doped GH-silicon carbide (SiC) were fabricated via chemical vapor deposition at 670 K followed by a reactive ion etch to pattern the contacts. Physical characterization by x-ray diffraction, x-ray photoe

Nyckelord

SILICON-CARBIDE; BARRIER DIODES; CONTACTS

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