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Use of oxygen-stabilized C-60 films for selective chemical vapor deposition
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- McGinnis, S (author)
- Uppsala universitet
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- Norin, L (author)
- Uppsala universitet
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- Jansson, U (author)
- Uppsala universitet
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- AMER INST PHYSICS, 1997
- English 586-588 s.
- In: APPLIED PHYSICS LETTERS. - : AMER INST PHYSICS. ; 70:5
- Other publication (other academic/artistic)
Abstract
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- Thin C-60 films exposed to ultraviolet/visible light in the presence of oxygen were used as a selective mask for tungsten chemical vapor deposition on silicon substrates. An uptake of oxygen in the fullerene films as well as a significant increase in the
Keyword
- SURFACE-CHEMISTRY; TUNGSTEN; SILICON; GROWTH
Publication and Content Type
- vet (subject category)
- ovr (subject category)
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- McGinnis, S
- Norin, L
- Jansson, U
- Carlsson, JO
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- Uppsala University
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