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Anomalous behaviour of the current noise in long-narrow-channel MOSFETS and its interpretation
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- Vandamme, LKJ (author)
- Uppsala universitet,Institutionen för materialvetenskap
- Kish, LB (author)
- Stoelinga, OLJ (author)
- (creator_code:org_t)
- PERGAMON-ELSEVIER SCIENCE LTD, 1999
- 1999
- English.
- In: SOLID-STATE ELECTRONICS. - : PERGAMON-ELSEVIER SCIENCE LTD. - 0038-1101. ; 43:4, s. 697-700
- Journal article (other academic/artistic)
Abstract
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- An anomalous behaviour of noise in n-type CMOSFETs with narrow, long channels has been found. At fixed drain voltage, biasing the device well in saturation, the noise current abruptly decreased by more than an order of magnitude with increasing gate volta
Keyword
- 1/F NOISE; TRANSISTORS; QUALITY; DEVICES; MOS
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- vet (subject category)
- art (subject category)
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