Iodide-Based Atomic Layer Deposition of ZrO2 : Aspects of Phase Stability and Dielectric Properties

• This study is an investigation into the influence of temperature, substrate, and thickness on the properties of ZrO2 thin films grown by atomic layer deposition (ALD). ZrI4 and H2O2 were used as source materials, and films deposited at temperatures between 250 °C and 500 °C consisted of mixed tetragonal and monoclinic ZrO2. The phase content and electrical properties of films of 3–30 nm thickness were studied for different temperatures and substrates. The films crystallized at smaller thicknesses on the Pt/Ti/SiO2/Si (denoted Pt in the following text) substrate than on polycrystalline Si (poly-Si) and MgO(001). It was also found that the film thickness had a stronger effect on the dielectric constant than either the growth temperature or the substrate.

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