Simulation and modeling of the substrate contribution to the output resistance for RF-LDMOS power transistors

• High frequency substrate losses for RF MOSFETs are analyzed using numerical device simulation. The results show that losses in devices made on low resistivity substrate occur through the substrate while losses in devices made on high resistivity substrate in the high frequency region occur along the surface through the device (source–drain). An equivalent circuit model is developed which accurately describes the off-state losses. Based on the model significant improvements in terms of output resistance are demonstrated, using an improved device on high resistivity substrate.

Nyckelord

Substrate losses

Modeling

RF MOSFET

LDMOS

TECHNOLOGY

TEKNIKVETENSKAP

Publikations- och innehållstyp

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