Theoretical calculations of mobility enhancement in strained silicon

• The conductivity enhancement of n -doped Si due to strain has been calculated by solving the Boltzmann equation within the relaxation-time approximation. For T=0 , we determined the Fermi surface from first principles, whereas for T>0 , we modeled the Fermi surface using the effective-mass approximation. We explain the saturation of the conductivity enhancement with increasing strain in terms of the topology of the Fermi surface. We find in accordance with experiment a decreasing enhancement with increasing doping concentration.

Ämnesord

NATURVETENSKAP  -- Fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences (hsv//eng)

Nyckelord

Elemental semiconductors

Low-field transport and mobility; piezoresistance

Theory of electronic transport; scattering mechanisms

Physics

Fysik

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