Large Spin Hall Conductivity in Epitaxial Thin Films of Kagome Antiferromagnet Mn3Sn at Room Temperature

• Mn3Sn is a non-collinear antiferromagnetic quantum material that exhibits a magnetic Weyl semimetallic state and has great potential for efficient memory devices. High-quality epitaxial c-plane Mn3Sn thin films have been grown on a sapphire substrate using a Ru seed layer. Using spin pumping induced inverse spin Hall effect measurements on c-plane epitaxial Mn3Sn/Ni80Fe20, spin-diffusion length (lambda(Mn3Sn)), and spin Hall conductivity (sigma(SH)) of Mn3Sn thin films are measured: lambda(Mn3Sn) = 0.42 +/- 0.04 nm and sigma(SH) = -702 h/e Omega(-1)cm(-1). While lambda(Mn3Sn) is consistent with earlier studies, sigma(SH) is an order of magnitude higher and of the opposite sign. The behavior is explained on the basis of excess Mn, which shifts the Fermi level in these films, leading to the observed behavior. These findings demonstrate a technique for engineering sigma(SH) of Mn3Sn films by employing Mn composition for functional spintronic devices.

Ämnesord

NATURVETENSKAP  -- Fysik -- Atom- och molekylfysik och optik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Atom and Molecular Physics and Optics (hsv//eng)

Nyckelord

ferromagnetic resonance

inverse spin Hall effect

Mn3Sn

non-collinear

antiferromagnet

spin pumping

Weyl semimetals

ferromagnetic-resonance

Physics

Optics

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