Fabrication of crossed junctions of semiconducting and metallic carbon nanotubes: A CNT-gated CNT-FET

• We have developed a method to fabricate crossed junctions between semiconducting (s) and metallic (m) carbon nanotubes (CNTs) combining electric field directed chemical vapor deposition growth and dielectrophoretic alignment. By separating the s- and m-CNTs with a thin dielectric an ultrasmall field effect transistor (FET) was fabricated. By using the m-CNT as a gate it was possible to modulate the source-drain current through the s-CNT FET channel. We have also used the m-CNT as an electrical lead. An off-state current lowering was observed when the m-CNT lead was used as a drain electrode.

Ämnesord

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Nyckelord

carbon nanotubes

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