Sökning: id:"swepub:oai:lup.lub.lu.se:0464838f-343f-4fde-aa04-94af04369124" >
A 128 Kb Single-Bit...
A 128 Kb Single-Bitline 8.4 fJ/Bit 90MHz at 0.3V 7T Sense-Amplifierless SRAM in 28 nm FD-SOI
-
- Mohammadi, Babak (författare)
- Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH
-
- Andersson, Oskar (författare)
- Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH
-
- Nguyen, Joseph (författare)
- STMicroelectronics SA, France,IMEP-LAHC
-
visa fler...
-
- Ciampolini, Lorenzo (författare)
- STMicroelectronics SA, France
-
- Cathelin, Andreia (författare)
- STMicroelectronics SA, France
-
- Rodrigues, Joachim (författare)
- Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH
-
visa färre...
-
(creator_code:org_t)
- 2016
- 2016
- Engelska.
-
Ingår i: European Solid-State Circuits Conference (ESSCIRC), 2016. - 9781509029723
- Relaterad länk:
-
http://dx.doi.org/10...
-
visa fler...
-
https://lup.lub.lu.s...
-
https://doi.org/10.1...
-
visa färre...
Abstract
Ämnesord
Stäng
- In this study, a 128 kb ultra low voltage (ULV) SRAM, based on a 7T bitcell with one bitline, is presented. Overall energy efficiency is enhanced by optimizations on all abstraction levels, i.e., from bitcell to macro integration. Degraded performance and reliability due to ULV operation is recovered by selectively overdriving the bitline and wordline with a new single-cycle charge-pump. A dedicated sense-amplifierless read architecture with a new address decoding scheme delivers 90 MHz read speed at 300 mV, dissipating 8.4 fJ/bit-access. The minimum operating voltage VMIN is measured as 240 mV and the retention voltage is found at 200 mV.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Publikations- och innehållstyp
- kon (ämneskategori)
- ref (ämneskategori)
Hitta via bibliotek
Till lärosätets databas