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Two mm-Wave VCOs in...
Two mm-Wave VCOs in 28-nm UTBB FD-SOI CMOS
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- Forsberg, Therese (författare)
- Lund University,Lunds universitet,Integrerade elektroniksystem,Forskargrupper vid Lunds universitet,Integrated Electronic Systems,Lund University Research Groups
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- Wernehag, Johan (författare)
- Lund University,Lunds universitet,System på chips (master),Utbildningsprogram, LTH,Lunds Tekniska Högskola,Integrerade elektroniksystem,Forskargrupper vid Lunds universitet,Embedded Electronics Engineering (M.Sc.),Educational programmes, LTH,Faculty of Engineering, LTH,Integrated Electronic Systems,Lund University Research Groups
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- Nejdel, Anders (författare)
- Lund University,Lunds universitet,Integrerade elektroniksystem,Forskargrupper vid Lunds universitet,Integrated Electronic Systems,Lund University Research Groups,Mellanox Technologies Ltd
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visa fler...
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- Sjöland, Henrik (författare)
- Lund University,Lunds universitet,Integrerade elektroniksystem,Forskargrupper vid Lunds universitet,Integrated Electronic Systems,Lund University Research Groups
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- Törmänen, Markus (författare)
- Lund University,Lunds universitet,Elektroteknik (CI),Utbildningsprogram, LTH,Lunds Tekniska Högskola,Integrerade elektroniksystem,Forskargrupper vid Lunds universitet,Electrical Engineering (M.Sc.Eng.),Educational programmes, LTH,Faculty of Engineering, LTH,Integrated Electronic Systems,Lund University Research Groups
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(creator_code:org_t)
- 2017
- 2017
- Engelska 3 s.
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Ingår i: IEEE Microwave and Wireless Components Letters. - 1531-1309. ; 27:5, s. 509-511
- Relaterad länk:
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http://dx.doi.org/10...
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https://lup.lub.lu.s...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Two 60-GHz band voltage controlled oscillators (VCOs) designed in a 28-nm ultrathin body and buried oxide fully depleted silicon on insulator (UTBB FD-SOI) CMOS process are demonstrated and compared. Both VCOs have identical cross-coupled nMOS cores and dissipate 3.15 mW from a 0.9-V supply. The first design uses a standard FET current source and achieves a figure of merit (FOM) of −181 dBc/Hz, whereas the second employs a filtered current source and achieves a state-of-the-art FOM of −187 dBc/Hz. The achieved 6-dB improvement demonstrates the efficiency of the filtering technique at millimeter wave frequencies and the feasibility of efficient low-phase noise designs in 28-nm UTBB FD-SOI CMOS. The active area of the filtered VCO is 90μm×180μm and the standard VCO has an area of 80μm×110μm.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
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- ref (ämneskategori)
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