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Sökning: id:"swepub:oai:lup.lub.lu.se:0c65f7e8-a0ad-446f-88c5-f99838ca3303" > Temperature depende...

Temperature dependent electronic band structure of wurtzite GaAs nanowires

Vainorius, Neimantas (författare)
Lund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Other operations, LTH,Faculty of Engineering, LTH,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
Kubitza, Simon (författare)
Lehmann, Sebastian (författare)
Lund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Other operations, LTH,Faculty of Engineering, LTH,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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Samuelson, Lars (författare)
Lund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Other operations, LTH,Faculty of Engineering, LTH,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
Dick, Kimberly (författare)
Lund University,Lunds universitet,Centrum för analys och syntes,Kemiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Centre for Analysis and Synthesis,Department of Chemistry,Departments at LTH,Faculty of Engineering, LTH
Pistol, Mats-Erik (författare)
Lund University,Lunds universitet,NanoLund: Centre for Nanoscience,Annan verksamhet, LTH,Lunds Tekniska Högskola,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Other operations, LTH,Faculty of Engineering, LTH,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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 (creator_code:org_t)
2018
2018
Engelska 6 s.
Ingår i: Nanoscale. - : Royal Society of Chemistry (RSC). - 2040-3364 .- 2040-3372. ; 10:3, s. 1481-1486
  • Tidskriftsartikel (refereegranskat)
Abstract Ämnesord
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  • It has recently become possible to grow GaAs in the wurtzite crystal phase. This ability allows interesting tests of band-structure theory. Wurtzite GaAs has two closely spaced direct conduction bands as well as three nondegenerate valence bands. The energies of the band edges are not well known, in particular not as a function of temperature. In order to improve the accuracy we have studied the temperature dependence of the conduction band minimum as well as of the second valence band maximum using resonant Raman scattering (of up to 3LO Raman lines). We find that the temperature dependence of the bandgap in wurtzite GaAs is very similar to that in zinc blende GaAs. Our results show that they have the same band gaps not only at 7 K but also at room temperature to within 5 meV. This is in some discrepancy with previous work. We find that the energy difference between the first two Γ9V and Γ7V valence bands is constant, around 100 meV, over the investigated temperature range, 7 K to 300 K. Due to a fortuitous spacing of the energy bands we find a very unexpected and strong quadruple resonance in the resonant Raman scattering.

Ämnesord

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

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