Trivacancy-oxygen complex in silicon: Local vibrational mode characterization

• FTIR study of the evolution of multivacancy-oxygen-related defects in the temperature range 100-350 degrees C in Czochralski-grown Si samples irradiated with different particles (10 MeV electrons and 5 MeV neutrons) has been carried out. Appearance of two absorption bands positioned at 833.4 and 842.4 cm(-1) has been found upon annealing of the divacancy related absorption band at 2767 cm(-1). The 833.4 cm(-1) band is assigned to a divacancy-oxygen defect. The 842.4 cm band is much more pronounced in neutron irradiated samples and we argue that it is related to a trivacancy-oxygen defect formed via interaction of mobile V-3 with O-i atoms. (C) 2009 Elsevier B.V. All rights reserved.

Ämnesord

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Nyckelord

Oxygen

Radiation damage

Silicon

Infra-red absorption

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