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Resonant Tunneling ...
Resonant Tunneling Permeable Base Transistor for RF applications
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- Lind, Erik (författare)
- Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Fasta tillståndets fysik,Fysiska institutionen,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH,Solid State Physics,Department of Physics,Faculty of Engineering, LTH
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- Lindström, Peter (författare)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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- Wernersson, Lars-Erik (författare)
- Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Fasta tillståndets fysik,Fysiska institutionen,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH,Solid State Physics,Department of Physics,Faculty of Engineering, LTH
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(creator_code:org_t)
- 2003
- 2003
- Engelska.
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Ingår i: 2003 International Semiconductor Device Research Symposium (IEEE Cat. No.03EX741). - 0780381394 ; , s. 487-488
- Relaterad länk:
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http://dx.doi.org/10...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- A technique is developed to embed tungsten inside semiconductors, with the possibility to combine the metallic elements and semiconductor heterostructure with nm-precision. This technique enables to fabricate a very high quality permeable base type of transistor. A resonant tunneling permeable base transistor, RT-PBT is fabricated by directly integrating a tungsten grating 30 nm above a pseudomorphic RTD. Double barrier heterostructure (AlGaAs/InGaAs) is grown by molecular beam epitaxy and the wafer is patterned by e-beam lithography to form the grating. Common collector current-voltage characteristics were measured at room temperature
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Nyckelord
- molecular beam epitaxy
- double barrier heterostructure
- room temperature
- semiconductor heterostructure
- metallic elements
- resonant tunneling permeable base transistor
- tungsten
- W
- AlGaAs-InGaAs
- 30 nm
- 293 to 298 K
- electron beam lithography
Publikations- och innehållstyp
- kon (ämneskategori)
- ref (ämneskategori)
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