InGaAs nanowire MOSFETs with ION = 555 μa/μm at IOFF = 100 nA/μm and VDD = 0.5 v

• We report on In0.85Ga0.15As nanowire MOSFETs (NWFETs) with record performance in several key VLSI metrics. These devices exhibit ION = 555 μA/μm (at IOFF = 100 nA/μm and VDD = 0.5 V), ION = 365 μA/μm (at IOFF = 10 nA/μm and VDD = 0.5 V) and a quality factor Q = gm/SS of 40, all of which are the highest reported for a III-V as well as silicon transistor. Furthermore, a highly scalable, self-Aligned gate-last fabrication process is utilized, with a single nanowire as the channel. The devices use a 45° angle between the nanowire and the contacts, which allows for up to a 1.4 times longer gate length at a given pitch.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

TEKNIK OCH TEKNOLOGIER  -- Nanoteknik -- Nanoteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Nano-technology -- Nano-technology (hsv//eng)

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