Site-control of InAs quantum dots on a patterned InP surface: As/P exchange reactions

• We present the effect of annealing temperature and annealing time on InAs/InP site-controlled quantum dot growth. Electron beam pre-patterning forms carbon nano-deposits at the InP surface, which then can be used as growth masks to form nano-holes at the surface. By only annealing of the patterned InP surface under an arsine ambient, As/P exchange reactions produce material sufficient for selective dot nucleation in the holes at the surface

Ämnesord

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

selective dot nucleation

arsine ambient

InAs-InP

nanoholes

patterned InP surface

InAs quantum dots

As/P exchange reactions

annealing temperature

annealing time

InAs/InP site controlled quantum dot growth

electron beam prepatterning forms

carbon nanodeposits

growth masks

InP surface

Publikations- och innehållstyp

kon (ämneskategori)

ref (ämneskategori)