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Local variation in ...
Local variation in Bi crystal sites of epitaxial GaAsBi studied by photoelectron spectroscopy and first-principles calculations
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- Laukkanen, P (författare)
- University of Turku
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- Punkkinen, M. P. J. (författare)
- University of Turku
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- Lahti, A. (författare)
- University of Turku
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- Puustinen, J. (författare)
- Tampere University of Technology
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- Tuominen, M (författare)
- University of Turku
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- Hilska, J. (författare)
- Tampere University of Technology
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- Mäkelä, J (författare)
- University of Turku
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- Dahl, J. (författare)
- University of Turku
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- Yasir, M. (författare)
- University of Turku
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- Kuzmin, M (författare)
- University of Turku,Ioffe Physical-Technical Institute of the Russian Academy of Sciences
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- Osiecki, J. R. (författare)
- Lund University,Lunds universitet,MAX IV-laboratoriet,MAX IV Laboratory
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- Schulte, K. (författare)
- Lund University
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- Guina, M. (författare)
- Tampere University of Technology
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- Kokko, K (författare)
- University of Turku
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(creator_code:org_t)
- Elsevier BV, 2017
- 2017
- Engelska 7 s.
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Ingår i: Applied Surface Science. - : Elsevier BV. - 0169-4332. ; 396, s. 688-694
- Relaterad länk:
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http://dx.doi.org/10...
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https://lup.lub.lu.s...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Epitaxial Bi-containing III–V crystals (III-V1-xBix) have attracted increasing interest due to their potential in infrared applications. Atomic-scale characterization and engineering of bulk-like III-V1-xBix properties (e.g., Bi incorporation and defect formation) are challenging but relevant to develop applications. Toward that target, we report here that the traditional surface-science measurement of photoelectron spectroscopy (PES) is a potential, non-destructive method to be combined in the studies of bulk-like properties, when surface effects are properly removed. We have investigated epitaxial GaAs1-xBix films, capped by epitaxial AlAs layers, with high-resolution photoelectron spectroscopy. The Bi5d core-level spectra of GaAs1-xBix together with ab-initio calculations give direct evidence of variation of Bi bonding environment in the lattice sites. The result agrees with photoluminescence (PL) measurement which shows that the studied GaAs1-xBix films include local areas with higher Bi content, which contribute to PL but do not readily appear in x-ray diffraction (XRD). The measured and calculated Bi core-level shifts show also that Ga vacancies and Bi clusters are dominant defects.
Ämnesord
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
Nyckelord
- GaAsBi
- Photoelectron spectroscopy
- Photoluminescence
- Synchrotron radiation
Publikations- och innehållstyp
- art (ämneskategori)
- ref (ämneskategori)
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Till lärosätets databas
- Av författaren/redakt...
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Laukkanen, P
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Punkkinen, M. P. ...
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Lahti, A.
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Puustinen, J.
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Tuominen, M
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Hilska, J.
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visa fler...
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Mäkelä, J
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Dahl, J.
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Yasir, M.
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Kuzmin, M
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Osiecki, J. R.
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Schulte, K.
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Guina, M.
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Kokko, K
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- NATURVETENSKAP
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NATURVETENSKAP
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och Fysik
- Artiklar i publikationen
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Applied Surface ...
- Av lärosätet
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Lunds universitet