Circuits and devices with integrated VFETs and RTDs

• We have realised a new technology for the integration of VFETs and RTDs. For these tunnelling transistors (so called resonant tunnelling permeable base transistors) we have developed large signal models which have been implemented in a Cadence simulation environment. The DC I-V characteristics are reproduced to a very high degree in these models. The models are further used for simulations of the behaviour of simple small-scale circuits including resonant tunnelling transistors. Examples of circuits studied are a monostable-bistable logic element and a ternary quantiser, where the later is based on a new 3D architecture of RTDs and VFETs

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

VFETs

large signal models

Cadence simulation environment

DC I-V characteristics

monostable-bistable logic element

small-scale circuits

3D architecture

ternary quantiser

RTDs

resonant tunnelling permeable base transistors

Publikations- och innehållstyp

kon (ämneskategori)

ref (ämneskategori)