III-V Heterostructure Nanowire Tunnel FETs

• In this paper, InAs/GaSb nanowire tunnel field-effect transistors (TFETs) are studied theoretically and experimentally. A 2-band 1-D analytic tunneling model is used to calculate the on- and off-current levels of nanowire TFETs with staggered source/channel band alignment. Experimental results from lateral InAs/GaSb are shown, as well as first results on integration of vertical InAs/GaSb nanowire TFETs on Si substrates.

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TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

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