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Spin-polarized elec...
Spin-polarized electron tunneling across a Si delta-doped GaMnAs/n-GaAs interface
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Andresen, SE (författare)
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Sorensen, BS (författare)
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Rasmussen, FB (författare)
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Lindelof, PE (författare)
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- Sadowski, Janusz (författare)
- Lund University,Lunds universitet,MAX IV-laboratoriet,MAX IV Laboratory
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Guertler, CM (författare)
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Bland, JAC (författare)
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(creator_code:org_t)
- AIP Publishing, 2003
- 2003
- Engelska.
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Ingår i: Applied Physics Reviews. - : AIP Publishing. - 1931-9401. ; 94:6, s. 3990-3994
- Relaterad länk:
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http://dx.doi.org/10...
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https://lup.lub.lu.s...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- We study the spin-polarized tunneling of electrons from the valence band of GaMnAs into the conduction band of n-type GaAs with Si delta-doping at the interface. The injection of spin-polarized electrons is detected as circular polarized emission from a GaInAs/GaAs quantum well light emitting diode, corresponding to magneto-optical Kerr effect loops. The angular momentum selection rules are simplified by the strain-induced heavy-hole/light-hole splitting, allowing a direct relation between circular polarization and spin-polarization. Comparison with the influence of Zeeman splitting allow us to conclude a spin-injection from the majority spin-band.
Ämnesord
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
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