Site-controlled Ge quantum dot growth on Si by the use of electron beam pre-patterning

• By growth of Si on substrates that have been pre-patterned by electron-beam induced carbon nano-growth masks, nano-holes form at the Si surface. We have grown self-assembled Ge quantum dots in these holes by ultra high vacuum chemical vapour phase deposition (UHV-CVD). We usually find four dots in each hole. By varying the amount of deposited Ge, we can obtain either four dome-shaped or four pyramid-shaped dots in the majority of holes. These dot arrangements could be used for the realisation of the simplest functional cell for quantum-dot cellular automata (QCA)

Subject headings

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

Keyword

site controlled Ge quantum dot growth

Si substrate

Si

electron beam prepatterning

self assembly

ultra high vacuum chemical vapour phase deposition

carbon nanogrowth masks

four pyramid shaped dots

dome shaped dots

simplest functional cell

Ge

quantum dot cellular automata

Publication and Content Type

kon (subject category)

ref (subject category)