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Gold-free GaAs/GaAs...
Gold-free GaAs/GaAsSb heterostructure nanowires grown on silicon
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Plissard, S. (författare)
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- Dick Thelander, Kimberly (författare)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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Wallart, X. (författare)
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Caroff, P. (författare)
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(creator_code:org_t)
- AIP Publishing, 2010
- 2010
- Engelska.
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Ingår i: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 96:12
- Relaterad länk:
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http://dx.doi.org/10...
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https://lilloa.univ-...
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https://lup.lub.lu.s...
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https://doi.org/10.1...
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Abstract
Ämnesord
Stäng
- Growth of GaAs/GaAsSb heterostructure nanowires on silicon without the need for gold seed particles is presented. A high vertical yield of GaAs nanowires is first obtained, and then GaAsxSb1-x segments are successfully grown axially in these nanowires. GaAsSb can also be integrated as a shell around the GaAs core. Finally, two GaAsSb segments are grown inside a GaAs nanowire and passivated using an AlxGa1-xAs shell. It is found that no stacking faults or twin planes occur in the GaAsSb segments.
Ämnesord
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
Nyckelord
- semiconductor quantum wires
- semiconductor
- semiconductor growth
- nanowires
- nanofabrication
- growth
- molecular beam epitaxial
- gallium arsenide
- III-V semiconductors
- heterojunctions
Publikations- och innehållstyp
- art (ämneskategori)
- ref (ämneskategori)
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