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The sub-band struct...
The sub-band structure of atomically sharp dopant profiles in silicon
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- Mazzola, Federico (författare)
- University of St Andrews,Norwegian University of Science and Technology
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- Chen, Chin Yi (författare)
- Purdue University
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- Rahman, Rajib (författare)
- University of New South Wales,Purdue University
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- Zhu, Xie Gang (författare)
- Science and Technology on Surface Physics and Chemistry Laboratory, Mianyang
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- Polley, Craig M. (författare)
- Lund University,Lunds universitet,MAX IV-laboratoriet,MAX IV Laboratory
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- Balasubramanian, Thiagarajan (författare)
- Lund University,Lunds universitet,MAX IV-laboratoriet,MAX IV Laboratory
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- King, Phil D.C. (författare)
- University of St Andrews
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- Hofmann, Philip (författare)
- Aarhus University
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- Miwa, Jill A. (författare)
- Aarhus University
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- Wells, Justin W. (författare)
- Norwegian University of Science and Technology
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(creator_code:org_t)
- 2020-06-01
- 2020
- Engelska.
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Ingår i: npj Quantum Materials. - : Springer Science and Business Media LLC. - 2397-4648. ; 5:1
- Relaterad länk:
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http://dx.doi.org/10... (free)
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https://www.nature.c...
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https://lup.lub.lu.s...
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https://doi.org/10.1...
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Abstract
Ämnesord
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- The downscaling of silicon-based structures and proto-devices has now reached the single-atom scale, representing an important milestone for the development of a silicon-based quantum computer. One especially notable platform for atomic-scale device fabrication is the so-called Si:P δ-layer, consisting of an ultra-dense and sharp layer of dopants within a semiconductor host. Whilst several alternatives exist, it is on the Si:P platform that many quantum proto-devices have been successfully demonstrated. Motivated by this, both calculations and experiments have been dedicated to understanding the electronic structure of the Si:P δ-layer platform. In this work, we use high-resolution angle-resolved photoemission spectroscopy to reveal the structure of the electronic states which exist because of the high dopant density of the Si:P δ-layer. In contrast to published theoretical work, we resolve three distinct bands, the most occupied of which shows a large anisotropy and significant deviation from simple parabolic behaviour. We investigate the possible origins of this fine structure, and conclude that it is primarily a consequence of the dielectric constant being large (ca. double that of bulk Si). Incorporating this factor into tight-binding calculations leads to a major revision of band structure; specifically, the existence of a third band, the separation of the bands, and the departure from purely parabolic behaviour. This new understanding of the band structure has important implications for quantum proto-devices which are built on the Si:P δ-layer platform.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Nanoteknik -- Nanoteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Nano-technology -- Nano-technology (hsv//eng)
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Mazzola, Federic ...
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Chen, Chin Yi
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Rahman, Rajib
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Zhu, Xie Gang
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Polley, Craig M.
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Balasubramanian, ...
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visa fler...
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King, Phil D.C.
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Hofmann, Philip
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Miwa, Jill A.
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Wells, Justin W.
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visa färre...
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- TEKNIK OCH TEKNOLOGIER
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TEKNIK OCH TEKNO ...
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och Nanoteknik
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och Nanoteknik
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Lunds universitet