Quantative photoelectron spectromicroscopy for investigation of PMMA resist residues

• We show that photoelectron spectroscopy (PES) due to its surface sensitivity can be used as a straightforward method to quantify the PMMA resist residues which remain on SiO2 surfaces after electron beam exposure and resist development. The attenuation of the SiO2 valence band and Si2p photoelectrons has been measured by using a photoelectron microscope and it has been found that correctly exposed and developed PMMA resist leaves residues with an average thickness of about 0.7 nm. Higher exposure doses result in decrease of the film thickness, but still with residues of about 0.5 nm. The technique can be applied as a powerful tool for surface and interface quality control in technology of electronic devices

Ämnesord

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

NATURVETENSKAP  -- Fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences (hsv//eng)

Nyckelord

Si2p photoelectrons

film thickness

SiO2 valence band

electron beam exposure

SiO2 surfaces

surface sensitivity

photoelectron spectromicroscopy

PMMA resist residues

attenuation

electronic devices technology

0.7 nm

0.5 nm

SiO2-Si

SiO2

Publikations- och innehållstyp

kon (ämneskategori)

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