A 4.3-mW mm-Wave Divide-by-Two Circuit with 30% Locking Range in 28-nm FD-SOI CMOS

Forsberg, Therese (författare): Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Integrerade elektroniksystem,Forskargrupper vid Lunds universitet,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH,Integrated Electronic Systems,Lund University Research Groups

Wernehag, Johan (författare): Lund University,Lunds universitet,Integrerade elektroniksystem,Forskargrupper vid Lunds universitet,Integrated Electronic Systems,Lund University Research Groups

Sjöland, Henrik (författare): Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Integrerade elektroniksystem,Forskargrupper vid Lunds universitet,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH,Integrated Electronic Systems,Lund University Research Groups

Törmänen, Markus (författare): Lund University,Lunds universitet,Institutionen för elektro- och informationsteknik,Institutioner vid LTH,Lunds Tekniska Högskola,Integrerade elektroniksystem,Forskargrupper vid Lunds universitet,Department of Electrical and Information Technology,Departments at LTH,Faculty of Engineering, LTH,Integrated Electronic Systems,Lund University Research Groups

(creator_code:org_t)

2018
2018
Engelska 4 s.
Ingår i: 2018 IEEE Nordic Circuits and Systems Conference (NORCAS): NORCHIP and International Symposium of System-on-Chip (SoC). - 9781538676578 - 9781538676561

Relaterad länk:: http://dx.doi.org/10...; visa fler...; https://lup.lub.lu.s...; https://doi.org/10.1...; visa färre...

Abstract Ämnesord

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A mm-wave divide-by-two circuit with high injection efficiency, implemented in a 28-nm fully-depleted silicon-on-insulator (FD-SOI) CMOS process is demonstrated stand-alone, as well as using an on-chip voltage controlled oscillator (VCO) as the input signal source. Measurements show that the divider has a 30.1 % tuning range centered at an output frequency of 24 GHz, at an input signal power of -1.5 dBm, and a power consumption of 4.3 mW from a 0.9 V supply. The VCO and divider combination has a tuning range of 10.2 %, centered at an output frequency of 30.2 GHz, at a total power consumption of 6.3 mW, and an output phase noise of -111 dBc/Hz at 10 MHz offset. The active area of the divider is 0.032 mm 2 and of the divider and VCO combination 0.043 mm 2 .

A mm-wave divide-by-two circuit with high injection efficiency, implemented in a 28-nm fully-depleted silicon-on-insulator (FD-SOI) CMOS process is demonstrated stand-alone, as well as using an on-chip voltage controlled oscillator (VCO) as the input signal source. Measurements show that the divider has a 30.1 % tuning range centered at an output frequency of 24 GHz, at an input signal power of -1.5 dBm, and a power consumption of 4.3 mW from a 0.9 V supply. The VCO and divider combination has a tuning range of 10.2 %, centered at an output frequency of 30.2 GHz, at a total power consumption of 6.3 mW, and an output phase noise of -111 dBc/Hz at 10 MHz offset. The active area of the divider is 0.032 mm 2 and of the divider and VCO combination 0.043 mm 2.

Av författaren/redakt...: Forsberg, Theres ...; Wernehag, Johan; Sjöland, Henrik; Törmänen, Markus

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TEKNIK OCH TEKNOLOGIER: TEKNIK OCH TEKNO ...; och Elektroteknik oc ...; och Annan elektrotek ...

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