Micro-Raman spectroscopy for the detection of stacking fault density in InAs and GaAs nanowires

• We investigate the relation between crystal stacking faults in individual wurtzite InAs and GaAs nanowires and the intensity of the forbidden longitudinal optical (LO) phonon mode in the Raman spectra. Micro-Raman spectroscopy and transmission electron microscopy are combined on the same individual nanowires to evaluate the LO mode intensity as a function of the stacking fault density. A clear increase in the LO mode intensity was observed when the stacking fault density was increased. Our results confirm the utility of Raman spectroscopy as a powerful tool for detecting crystal defects in nanowires.

Ämnesord

NATURVETENSKAP  -- Fysik -- Den kondenserade materiens fysik (hsv//swe)

NATURAL SCIENCES  -- Physical Sciences -- Condensed Matter Physics (hsv//eng)

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