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Calculations of the...
Calculations of the electronic structure of strained InAs quantum dots in InP
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- Holm, Magnus (författare)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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- Pistol, Mats-Erik (författare)
- Lund University,Lunds universitet,Fasta tillståndets fysik,Fysiska institutionen,Institutioner vid LTH,Lunds Tekniska Högskola,Solid State Physics,Department of Physics,Departments at LTH,Faculty of Engineering, LTH
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Pryor, C (författare)
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(creator_code:org_t)
- AIP Publishing, 2002
- 2002
- Engelska.
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Ingår i: Applied Physics Reviews. - : AIP Publishing. - 1931-9401. ; 92:2, s. 932-936
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http://dx.doi.org/10...
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Abstract
Ämnesord
Stäng
- We have calculated the electronic structure of InAs quantum dots embedded in InP as a function of size, using strain dependent eight-band k.p theory in the envelope function approximation. A realistic three-dimensional shape was used for the simulations and the piezoelectric polarization of the system was included. In order to avoid spurious solutions, an extra term was added to the Hamiltonian. Polarization dependent dipole matrix elements were calculated as well as the exciton binding energies. A comparison between measurements and calculated transition energies shows good agreement. (C) 2002 American Institute of Physics.
Ämnesord
- NATURVETENSKAP -- Fysik -- Den kondenserade materiens fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences -- Condensed Matter Physics (hsv//eng)
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