Electrical Properties of Vertical InAs/InGaAs Heterostructure MOSFETs

• Vertical InAs/InGaAs nanowire MOSFETs are fabricated in a gate-last fabrication process, which allows gate-lengths down to 25 nm and accurate gate-alignment. These devices demonstrate high performance with transconductance of 2.4 mS/μm, high on-current, and off-current below 1 nA/μm. An in-depth analysis of the heterostructure MOSFETs are obtained by systematically varying the gate-length and gate location. Further analysis is done by using virtual source modeling. The injection velocities and transistor metrics are correlated with a quasi-ballistic 1-D MOSFET model. Based on our analysis, the observed performance improvements are related to the optimized gate-length, high injection velocity due to asymmetric scattering, and low access resistance.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

Fabrication

heterostructure.

InAs

InGaAs

Logic gates

MOSFET

nanowire

Resistance

Scattering

Semiconductor device modeling

Vertical

Publikations- och innehållstyp

art (ämneskategori)

ref (ämneskategori)