A High Voltage mm-wave Stacked HEMT Power Amplifier in 0.1 mu m m InGaAs Technology

• A stacked HEMT PA has been designed and implemented in a commercial 0.1 mu m InGaAs pHEMT process to increase gain and output power at mm-waves. Measurements on the 3-stage PA with parallel devices verify saturated output power of 25 dBm and maximum PAE of 15 % at 61 GHz, which is the highest reported output power of similar designs and topologies. The chip size measures 3.2 mm(2) which makes this the most power dense V-band amplifier reported from GaAs with 100 mW/mm(2).

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

Stacked

PA

GaAs

MMIC

V-band

FET

Power Amplifier

HEMT

mm-wave

Publikations- och innehållstyp

kon (ämneskategori)

ref (ämneskategori)