CMOS devices and circuits for microwave and millimetre wave applications

• We present several building blocks for RFfront ends at micro and mm-wave frequencies using 90 nmCMOS. The designs are 20 GHz single- and 40 GHz doublestage amplifiers with 5.6 and 7.3 dB gain respectively, a 20GHz resistive mixer with CL = 7.9 dB and IIP3 = 17.5 dBmplus frequency doublers to 40 and 60 GHz with CL = 15.8and 15.3 dB respectively. All circuits have been designedusing distributed elements. Both using a 5 metal layerBEOL process and a 3 metal layer BEOL with postprocessing.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Publikations- och innehållstyp

kon (ämneskategori)

ref (ämneskategori)