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Graphene GaN-Based ...
Graphene GaN-Based Schottky Ultraviolet Detectors
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- Xu, K. (author)
- Beijing University of Technology
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- Xu, C. (author)
- Beijing University of Technology
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- Xie, Y. (author)
- Chinese Academy of Sciences
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- Deng, J. (author)
- Beijing University of Technology
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- Zhu, Y. X. (author)
- Beijing University of Technology
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- Guo, W. L. (author)
- Beijing University of Technology
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- Xun, M. (author)
- Beijing University of Technology
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- Teo, K. B. K. (author)
- Aixtron Limited
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- Chen, H. D. (author)
- Chinese Academy of Sciences
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- Sun, Jie, 1977 (author)
- Beijing University of Technology
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(creator_code:org_t)
- Institute of Electrical and Electronics Engineers (IEEE), 2015
- 2015
- English.
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In: IEEE Transactions on Electron Devices. - : Institute of Electrical and Electronics Engineers (IEEE). - 1557-9646 .- 0018-9383. ; 62:9, s. 2802-2808
- Related links:
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http://dx.doi.org/10...
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https://doi.org/10.1...
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Abstract
Subject headings
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- Graphene GaN-based Schottky ultraviolet detectors are fabricated. The monolayer graphene is grown by chemical vapor deposition. The graphene is much more transparent than metals, as confirmed by the fact that our devices retain their high responsivity up to 360-nm wavelength (corresponding to the band edge absorption of GaN). Importantly, by virtue of the tunable work function of graphene, the graphene GaN Schottky barrier height can be greatly enlarged. The built-in field is enhanced, and the detector performance is improved. The current ratio with and without luminescence is up to 1.6 x 10(4). The characteristic time constants of the devices are in the order of a few milliseconds. The device open-circuit voltage and short-circuit current are also increased. At last, special type Schottky devices consisting of GaN nanorods or surface-etched GaN are prepared for complementary study. It is found although the dry etching induced surface defects lead to an increase in the dark current, and these carrier traps also greatly contribute to the photoconductivity under luminescence, resulting in extraordinarily large responsivity (up to 360 A/W at -6 V).
Subject headings
- TEKNIK OCH TEKNOLOGIER -- Materialteknik -- Annan materialteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Materials Engineering -- Other Materials Engineering (hsv//eng)
- TEKNIK OCH TEKNOLOGIER -- Nanoteknik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Nano-technology (hsv//eng)
Keyword
- GaN
- Schottky ultraviolet (UV) detectors
- graphene
Publication and Content Type
- art (subject category)
- ref (subject category)
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- By the author/editor
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Xu, K.
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Xu, C.
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Xie, Y.
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Deng, J.
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Zhu, Y. X.
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Guo, W. L.
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show more...
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Xun, M.
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Teo, K. B. K.
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Chen, H. D.
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Sun, Jie, 1977
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show less...
- About the subject
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- ENGINEERING AND TECHNOLOGY
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ENGINEERING AND ...
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and Materials Engine ...
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and Other Materials ...
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- ENGINEERING AND TECHNOLOGY
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ENGINEERING AND ...
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and Nano technology
- Articles in the publication
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IEEE Transaction ...
- By the university
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Chalmers University of Technology