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Optimization of SiC...
Optimization of SiC MESFET for high power and high frequency applications
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- Ejebjörk, Niclas, 1984 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology,Department of Microtechnology and Nanoscience, Microwave Electronics Laboratory, Chalmers University of Technology, Sweden
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- Zirath, Herbert, 1955 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology,Department of Microtechnology and Nanoscience, Microwave Electronics Laboratory, Chalmers University of Technology, Sweden
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- Bergman, Peder (författare)
- Linköpings universitet,Halvledarmaterial,Tekniska högskolan
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- Magnusson, Björn (författare)
- Norstel AB, SE-60238, Sweden
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- Rorsman, Niklas, 1964 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology,Department of Microtechnology and Nanoscience, Microwave Electronics Laboratory, Chalmers University of Technology, Sweden
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(creator_code:org_t)
- Trans Tech Publications Inc. 2011
- 2011
- Engelska.
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Ingår i: Materials Science Forum. - : Trans Tech Publications Inc.. - 1662-9752 .- 0255-5476. ; 679-680, s. 629-632, s. 629-632
- Relaterad länk:
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http://dx.doi.org/10...
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https://doi.org/10.4...
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https://research.cha...
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https://urn.kb.se/re...
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Abstract
Ämnesord
Stäng
- SiC MESFETs were scaled both laterally and vertically to optimize high frequency and high power performance. Two types of epi-stacks of SiC MESFETs were fabricated and measured. The first type has a doping of 3×10^17 cm-3 in the channel and the second type has higher doping (5×10^17 cm-3) in the channel. The higher doping allows the channel to be thinner for the same current density and therefore a reduction of the aspect ratio is possible. This could impede short channel effects. For the material with higher channel doping the maximum transconductance is 58 mS/mm. The maximum current gain frequency, fT, and maximum frequency of oscillation, fmax, is 9.8 GHz and 23.9 GHz, and 12.4 GHz and 28.2 GHz for the MESFET with lower doped channel and higher doping, respectively.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- Silicon Carbide (SiC)
- MESFET
- High Power
- DC Measurements
- High Frequency
- High Doped Channel
- Small-Signal Measurements
- SiC
Publikations- och innehållstyp
- kon (ämneskategori)
- ref (ämneskategori)
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