Study of A1/Nb interface by spectroscopy of reflected electrons

• We have studied Al/Nb interface with help of spectroscopy of reflected electrons. Ion sputtering combined with monitoring of Auger peaks has been used to approach the interface. The developed method of quantitative interpretation of spectra allowed us to characterize the distribution of Al and Nb in the interface region with a nanometer depth resolution. The Al/Nb interface was found to have an intermediate layer of about 10 nm thickness, which is more likely due to the interface roughness, rather than diffusion smearing. We discuss the possibility to distinguish by means of spectroscopy of reflected electrons either material under analysis is a single phase or a mixture of two phases.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

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art (ämneskategori)

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