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Nanoelectronic devi...
Nanoelectronic devices in InGaAs/inP based on ballistic and quantum effects
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- Sun, Jie, 1977 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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(creator_code:org_t)
- ISBN 9783639206685
- 2009
- Engelska.
- Relaterad länk:
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https://research.cha...
Abstract
Ämnesord
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- As current silicon-based microelectronic devices and circuits are approaching their fundamental limits, the research field of nanoelectronics is emerging worldwide. Materials other than silicon and device principles other than complementary metal-oxide-semiconductor (CMOS) are being investigated. With this background, the present book focuses on nanoelectronic devices in InGaAs/InP based on ballistic and quantum effects. The main material studied was a modulation doped InGaAs/InP two-dimensional electron gas. The book covers mainly three types of devices and their twofold integration: in-plane gate transistors, three-terminal ballistic junctions and quantum dots. Novel device properties were studied in detail. The author hopes the results presented in this book to be a valuable contribution to the nanoelectronic research on InP-based semiconductors. The book should be interesting to semiconductor material scientists, device physicists and electronic engineers.
Ämnesord
- NATURVETENSKAP -- Fysik (hsv//swe)
- NATURAL SCIENCES -- Physical Sciences (hsv//eng)
Publikations- och innehållstyp
- bok (ämneskategori)
- vet (ämneskategori)
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