Analysis of Lateral Thermal Coupling for GaN MMIC Technologies

• This paper presents a study of the lateral heat propagation in an aluminum gallium nitride/gallium nitride (AlGaN/GaN) heterostructure grown on a silicon carbide substrate. The study is enabled by the design of a temperature sensor that utilizes the temperature-dependent I-V characteristic of a semiconductor resistor, making it suitable for integration in GaN monolithic microwave integrated circuit technologies. Using the sensor, we are able to characterize the thermal transient response and extract lateral thermal time constants from the measurements. Time constants in the range from 25 mu s to 1.2 ms are identified. Furthermore, the heat propagation properties are characterized for heat source-to-sensor distances of 86-484 mu m, resulting in delay times from 3.5 to 111 mu s. It is shown that both the time constants and propagation delay increase with temperature. An empirical model of the sensor current versus temperature and voltage is proposed and used to predict the junction temperature of the sensor. The study provides knowledge for heat management design and proposes an integrated temperature measurement solution for future highly integrated GaN applications.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Maskinteknik -- Energiteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Mechanical Engineering -- Energy Engineering (hsv//eng)

TEKNIK OCH TEKNOLOGIER  -- Annan teknik -- Övrig annan teknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Other Engineering and Technologies -- Other Engineering and Technologies not elsewhere specified (hsv//eng)

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

heat spread

lateral coupling

Gallium nitride (GaN)

semiconductor resistor

thermal sensors

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