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Cold-electron bolometer array integrated with a 350 GHz cross-slot antenna

Tarasov, Mikhail, 1954 (författare)
Chalmers tekniska högskola,Chalmers University of Technology
Kuzmin, Leonid, 1946 (författare)
Chalmers tekniska högskola,Chalmers University of Technology
Kaurova, Natalia (författare)
Chalmers tekniska högskola,Chalmers University of Technology
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Otto, Ernst, 1971 (författare)
Chalmers tekniska högskola,Chalmers University of Technology
Yassin, G. (författare)
University Of Oxford
Bernardis, P. D. (författare)
Universita degli Studi di Roma la Sapienza,Sapienza University of Rome
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 (creator_code:org_t)
ISBN 9781617823626
2010
2010
Engelska.
Ingår i: 21st International Symposium on Space Terahertz Technology 2010, ISSTT 2010; Oxford; United Kingdom; 23 March 2010 through 25 March 2010. - 9781617823626 ; , s. 219-224
  • Konferensbidrag (refereegranskat)
Abstract Ämnesord
Stäng  
  • Two series/parallel arrays of Cold-Electron Bolometers (CEB) with Superconductor-Insulator-Normal (SIN) tunnel junctions were integrated in orthogonal ports of a cross-slot antenna. The receiving system was designed for polarisation measurements in a 350 GHz frequency band with JFET readout at the BOOMERanG-FG balloon telescope. Each orthogonal array consists of 10 cold-electron bolometers connected in parallel for RF signal and in series for DC signal. The array was designed to increase the output resistance by a factor of 102 in comparison to a single CEB, for matching with JFET readout while maintaining the same conditions for RF coupling. The dynamic resistance of such array is 1 M5 at the bias point of maximal response. For the input microwave signal bolometers are connected in parallel. This provides matching to the 30 input impedance of a cross-slot antenna on Si substrate. The array of bolometers has a saturation power 10 times higher than a single bolometer. This significantly increases the dynamic range. With a measured temperature response of 8.8 μV/mK, a total absorber volume of 0.08 μm3, and an output noise of about 11 nV/Hz1/2, we estimated the dark electrical noise equivalent power as NEP=6*10-18 W/Hz1/2 at 280 mK. The optical response was measured using both hot/cold loads and a backward wave oscillator as sources of radiation.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)
ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

Electric resistance
Infrared detectors
Backward wave oscillator
Output resistance
Dynamic resistance
Cold electron bolometers
Slot antennas
Measured temperatures
Bolometers
Electrical noise
Frequency bands
Receiving system
Microwave signals

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