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Cold-electron bolom...
Cold-electron bolometer array integrated with a 350 GHz cross-slot antenna
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- Tarasov, Mikhail, 1954 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Kuzmin, Leonid, 1946 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Kaurova, Natalia (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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visa fler...
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- Otto, Ernst, 1971 (författare)
- Chalmers tekniska högskola,Chalmers University of Technology
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- Yassin, G. (författare)
- University Of Oxford
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- Bernardis, P. D. (författare)
- Universita degli Studi di Roma la Sapienza,Sapienza University of Rome
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visa färre...
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(creator_code:org_t)
- ISBN 9781617823626
- 2010
- 2010
- Engelska.
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Ingår i: 21st International Symposium on Space Terahertz Technology 2010, ISSTT 2010; Oxford; United Kingdom; 23 March 2010 through 25 March 2010. - 9781617823626 ; , s. 219-224
- Relaterad länk:
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https://research.cha...
Abstract
Ämnesord
Stäng
- Two series/parallel arrays of Cold-Electron Bolometers (CEB) with Superconductor-Insulator-Normal (SIN) tunnel junctions were integrated in orthogonal ports of a cross-slot antenna. The receiving system was designed for polarisation measurements in a 350 GHz frequency band with JFET readout at the BOOMERanG-FG balloon telescope. Each orthogonal array consists of 10 cold-electron bolometers connected in parallel for RF signal and in series for DC signal. The array was designed to increase the output resistance by a factor of 102 in comparison to a single CEB, for matching with JFET readout while maintaining the same conditions for RF coupling. The dynamic resistance of such array is 1 M5 at the bias point of maximal response. For the input microwave signal bolometers are connected in parallel. This provides matching to the 30 input impedance of a cross-slot antenna on Si substrate. The array of bolometers has a saturation power 10 times higher than a single bolometer. This significantly increases the dynamic range. With a measured temperature response of 8.8 μV/mK, a total absorber volume of 0.08 μm3, and an output noise of about 11 nV/Hz1/2, we estimated the dark electrical noise equivalent power as NEP=6*10-18 W/Hz1/2 at 280 mK. The optical response was measured using both hot/cold loads and a backward wave oscillator as sources of radiation.
Ämnesord
- TEKNIK OCH TEKNOLOGIER -- Elektroteknik och elektronik (hsv//swe)
- ENGINEERING AND TECHNOLOGY -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)
Nyckelord
- Electric resistance
- Infrared detectors
- Backward wave oscillator
- Output resistance
- Dynamic resistance
- Cold electron bolometers
- Slot antennas
- Measured temperatures
- Bolometers
- Electrical noise
- Frequency bands
- Receiving system
- Microwave signals
Publikations- och innehållstyp
- kon (ämneskategori)
- ref (ämneskategori)
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