Effect of oxide traps on channel transport characteristics in graphene field effect transistors

• A semiempirical model describing the influence of interface states on characteristics of gatecapacitance and drain resistance versus gate voltage of top gated graphene field effect transistors ispresented. By fitting our model to measurements of capacitance–voltage characteristics and relatingthe applied gate voltage to the Fermi level position, the interface state density is found. Knowing theinterface state density allows us to fit our model to measured drain resistance–gate voltagecharacteristics. The extracted values of mobility and residual charge carrier concentration arecompared with corresponding results from a commonly accepted model which neglects the effect ofinterface states. The authors show that mobility and residual charge carrier concentration differsignificantly, if interface states are neglected. Furthermore, our approach allows us to investigate indetail how uncertainties in material parameters like the Fermi velocity and contact resistanceinfluence the extracted values of interface state density, mobility, and residual charge carrierconcentration.

Ämnesord

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

TEKNIK OCH TEKNOLOGIER  -- Nanoteknik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Nano-technology (hsv//eng)

TEKNIK OCH TEKNOLOGIER  -- Elektroteknik och elektronik -- Annan elektroteknik och elektronik (hsv//swe)

ENGINEERING AND TECHNOLOGY  -- Electrical Engineering, Electronic Engineering, Information Engineering -- Other Electrical Engineering, Electronic Engineering, Information Engineering (hsv//eng)

Nyckelord

interface states

graphene

drain resistance

capacitance

Publikations- och innehållstyp

art (ämneskategori)

ref (ämneskategori)